Sensitivity Analysis of Junction Free Electrostatically Doped Tunnel-FET Based Biosensor

fabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions

a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...

Ambipolar Effect Free Double Gate PN Diode Based Tunnel FET

Analysis of GAA Tunnel FET using MATLAB

In order to improve the energy efficiency of next generation digital systems, transistors withSubthreshold SlopeReferences Q. Zhang, W. Zhao, and A. Seabaugh, "Low-subthreshold-swing tunnel

Magnetic tunnel junction sensors with pTesla sensitivity

Biomedical imaging techniques such as magneto-cardiography demand highly sensitive magnetic sensors capable to detect fields down to sub-picoTesla range at low frequencies (<10 hz). Currently, systems composed of superconducting quantum interference devices or hybrid supercond ucting/magnetoresistive (Mr) sensors fulfill such requirements, with the inconvenient of working at temperatures a few ...

Surface engineering for enhancement of sensitivity in an underlap-FET biosensor by control of wettability.

The present work aims to improve the sensitivity of an electrical biosensor by simply changing a surface property of the passivation layer, which covers the background region except for the sensing site for electrical isolation among adjacent interconnection lines. The hydrophobic passivation layer dramatically enhances the sensitivity of the biosensor when compared with a hydrophilic passivati...